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| RECTRON TECHNICAL SPECIFICATION SEMICONDUCTOR DUAL SURFACE MOUNT SCHOTTKY BAT54S Absolute Maximun Ratings per Diode (Ta=25oC) Dimensions SOT-23 Items Reverse Voltage Power Dissipation * Forward Voltage @ If = 100mA Forward Current Junction Temp. Storage Temp. Symbol VR PTOT VF IF TJ TSTG Ratings 30 300 1.0 200 -55 to 125 -55 to 150 Unit V mW V mA o o C C Mechanical Data Items P a cka g e Lead Frame Lead Finish Bond Wire Mold Resin Chip Materials SOT-23 42 Alloy Solder Plating Au Epoxy Silicon Electrical Characteristics per diode (Ta=25oC) Ratings Minimum Repetitive Peak Reverse Voltage Maximum Repetitive Peak Forward Current Maximum Forward Voltage IF= 100uA IF= 1mA IF= 10mA IF= 30mA IF= 100mA Maximum Reverse Current VR= 25V Maximum Junction Capacitance VR= 1V, f= 1MHz Maximum Reverse Recovery Time IF= 10mA, IR= 10mA, IRR= 1mA, RL= 100W Thermal Resistance* * (Mounted on a 10x8x0.6mm ceramic substrate) Symbol VRRM IFRM Ratings 30 300 240 320 400 500 1000 2.0 15 5 430 Unit V mA VF mV IR Cj trr Rjc uA pF ns o C/W RECTRON USA 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com |
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